N-Channel Power MOSFET, 30V Vds, 13A Continuous Drain Current. Features low 7.8mΩ Rds(on) at 10V Vgs, 1.8V threshold voltage, and 4.9ns fall time. Surface mountable in a 6-pin Direct-FET SQ package, supplied on tape and reel. Operates from -40°C to 150°C with 42W max power dissipation. RoHS compliant.
International Rectifier IRF6631TRPBF technical specifications.
| Continuous Drain Current (ID) | 13A |
| Current Rating | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 4.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 7.8mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF6631TRPBF to view detailed technical specifications.
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