N-Channel Power MOSFET, 30V Vds, 13A Continuous Drain Current. Features low 7.8mΩ Rds(on) at 10V Vgs, 1.8V threshold voltage, and 4.9ns fall time. Surface mountable in a 6-pin Direct-FET SQ package, supplied on tape and reel. Operates from -40°C to 150°C with 42W max power dissipation. RoHS compliant.
Current Rating13A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6631TRPBF technical specifications.
General
Continuous Drain Current (ID)
13A
Current Rating
13A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.8mR
Drain to Source Voltage (Vdss)
30V
Fall Time
4.9ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.45nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
42W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
7.8mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
18ns
Turn-On Delay Time
15ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6631TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6631TRPBF to view detailed technical specifications.
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