International Rectifier
IRF6636
Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
International Rectifier IRF6636 technical specifications.
General
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
20V
Fall Time
6.2ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.42nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Package Quantity
1
Packaging
Cut Tape
Polarity
N-CHANNEL
Power Dissipation
2.2W
Rds On Max
4.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
16ns
DC Rated Voltage
20V
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6636 Datasheet
Download the complete datasheet for International Rectifier IRF6636 to view detailed technical specifications.
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