International Rectifier
IRF6636TR1
Power Field-Effect Transistor, 18A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
International Rectifier IRF6636TR1 technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Current Rating | 18A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 3.2mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 6.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.42nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.2W |
| Rds On Max | 4.5mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 16ns |
| DC Rated Voltage | 20V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6636TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6636TR1 to view detailed technical specifications.
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