N-Channel Power MOSFET, 20V Vdss, 18A continuous drain current, and 4.5mΩ Rds On Max. Features low 6.4mΩ drain-source resistance and 42W power dissipation. Operates from -40°C to 150°C with a nominal Vgs of 2.45V. Includes 6.2ns fall time and 16ns turn-off delay. Surface mount package, 3.95mm width, 0.506mm height, tape and reel packaging. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6636TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 18A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 6.4mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 4.5MR |
| Fall Time | 6.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 2.42nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Nominal Vgs | 2.45V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 4.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 16ns |
| Turn-On Delay Time | 14ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6636TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6636TR1PBF to view detailed technical specifications.
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