N-Channel Power MOSFET, 20V Vdss, 18A continuous drain current, and 4.5mΩ Rds On Max. Features low 6.4mΩ drain-source resistance and 42W power dissipation. Operates from -40°C to 150°C with a nominal Vgs of 2.45V. Includes 6.2ns fall time and 16ns turn-off delay. Surface mount package, 3.95mm width, 0.506mm height, tape and reel packaging. RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6636TR1PBF technical specifications.
General
Continuous Drain Current (ID)
18A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
6.4mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
4.5MR
Fall Time
6.2ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
2.42nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
42W
Mount
Surface Mount
Nominal Vgs
2.45V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
4.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
16ns
Turn-On Delay Time
14ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6636TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6636TR1PBF to view detailed technical specifications.
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