N-Channel Power MOSFET, 20V Vds, 18A Continuous Drain Current (ID). Features low 4.5mΩ Rds(on) at Vgs=10V, enabling efficient power switching. Operates across a wide temperature range of -40°C to 150°C with a maximum power dissipation of 42W. Surface mount package with 2.42nF input capacitance and fast switching times, including a 6.2ns fall time. ROHS compliant and supplied on tape and reel.
Current Rating18A
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6636TRPBF technical specifications.
General
Continuous Drain Current (ID)
18A
Current Rating
18A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
6.4mR
Drain to Source Voltage (Vdss)
20V
Fall Time
6.2ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
2.42nF
Lead Free
Lead Free
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Number of Elements
1
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
4.5mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
16ns
Turn-On Delay Time
14ns
DC Rated Voltage
20V
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6636TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6636TRPBF to view detailed technical specifications.
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