N-channel power MOSFET featuring 30V drain-source breakdown voltage and 25A continuous drain current. This single-element silicon FET offers a low 2.9mΩ Rds(on) at a nominal 1.8V Vgs, with fast switching speeds including a 6.2ns fall time. Designed for surface mounting, it operates within a -40°C to 150°C temperature range and boasts a maximum power dissipation of 89W. The component is RoHS compliant and packaged on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6638TR1PBF technical specifications.
General
Continuous Drain Current (ID)
25A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.9mR
Drain to Source Voltage (Vdss)
30V
Fall Time
6.2ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
3.77nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.8V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
2.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
28ns
Turn-On Delay Time
19ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6638TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6638TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.