N-channel power MOSFET featuring 30V drain-source breakdown voltage and 25A continuous drain current. This single-element silicon FET offers a low 2.9mΩ Rds(on) at a nominal 1.8V Vgs, with fast switching speeds including a 6.2ns fall time. Designed for surface mounting, it operates within a -40°C to 150°C temperature range and boasts a maximum power dissipation of 89W. The component is RoHS compliant and packaged on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
Quick Jump:
Technical Specifications
International Rectifier IRF6638TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 25A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.9mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 3.77nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 2.9mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 28ns |
| Turn-On Delay Time | 19ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6638TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6638TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.