N-CHANNEL MOSFET featuring 150V drain-source breakdown voltage and 6.2A continuous drain current. Offers low 29mΩ drain-source on-resistance at a nominal 4V gate-source voltage. This surface mount component boasts a 34.5mΩ maximum Rds On, 39nC gate charge, and fast switching times with a 4.4ns fall time. Operating temperature range from -40°C to 150°C, with a maximum power dissipation of 89W.
Current Rating6.2A
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6643TR1PBF technical specifications.
General
Continuous Drain Current (ID)
6.2A
Current Rating
6.2A
Drain to Source Breakdown Voltage
150V
Drain to Source Resistance
29mR
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
34.5MR
Dual Supply Voltage
150V
Fall Time
4.4ns
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
2.34nF
Lead Free
Lead Free
Length
5.45mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
4V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
34.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
4V
Turn-Off Delay Time
13ns
Turn-On Delay Time
9.2ns
DC Rated Voltage
150V
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6643TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6643TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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