N-CHANNEL MOSFET featuring 150V drain-source breakdown voltage and 6.2A continuous drain current. Offers low 29mΩ drain-source on-resistance at a nominal 4V gate-source voltage. This surface mount component boasts a 34.5mΩ maximum Rds On, 39nC gate charge, and fast switching times with a 4.4ns fall time. Operating temperature range from -40°C to 150°C, with a maximum power dissipation of 89W.
Current Rating6.2A
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6643TR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Breakdown Voltage | 150V |
| Drain to Source Resistance | 29mR |
| Drain to Source Voltage (Vdss) | 150V |
| Drain-source On Resistance-Max | 34.5MR |
| Dual Supply Voltage | 150V |
| Fall Time | 4.4ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 2.34nF |
| Lead Free | Lead Free |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 34.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9.2ns |
| DC Rated Voltage | 150V |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6643TR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6643TR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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