N-channel MOSFET featuring 80V drain-to-source breakdown voltage and 12A continuous drain current. This DirectFET™ component offers a low Rds(on) of 9.5mΩ at a nominal Vgs of 4.9V. Operating across a temperature range of -40°C to 150°C, it boasts fast switching characteristics with turn-on delay of 17ns and fall time of 12ns. Surface mountable with SMD/SMT termination, it has a maximum power dissipation of 2.8W.
Current Rating12A
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6646TR1 technical specifications.
General
Continuous Drain Current (ID)
12A
Current Rating
12A
Drain to Source Breakdown Voltage
80V
Drain to Source Voltage (Vdss)
80V
Dual Supply Voltage
80V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.06nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
4.9V
Package Quantity
1
Packaging
Cut Tape
Polarity
N-CHANNEL
Power Dissipation
2.8W
Rds On Max
9.5mR
Reach SVHC Compliant
No
Reverse Recovery Time
36ns
RoHS Compliant
No
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
31ns
Turn-On Delay Time
17ns
DC Rated Voltage
80V
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF6646TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6646TR1 to view detailed technical specifications.
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