International Rectifier
IRF6662
International Rectifier IRF6662 N-channel MOSFET Transistor, 8.3 A, 100 V, 7-pin DirectFET MZ
MountingSurface Mount
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Technical Specifications
International Rectifier IRF6662 technical specifications.
General
| Continuous Drain Current (ID) | 8.3A |
| Fall Time | 5.9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 1.36nF |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | No |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 11ns |
| Width | 5.05mm |
Compliance
| RoHS | Not CompliantNo |
Datasheet
International Rectifier IRF6662 Datasheet
Download the complete datasheet for International Rectifier IRF6662 to view detailed technical specifications.
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