International Rectifier
IRF6668TR1
Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ISOMETRIC-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
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Technical Specifications
International Rectifier IRF6668TR1 technical specifications.
General
Continuous Drain Current (ID)
55A
Drain to Source Breakdown Voltage
80V
Drain to Source Voltage (Vdss)
80V
Fall Time
23ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
1.32nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1000
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.8W
Rds On Max
15mR
RoHS Compliant
No
Series
HEXFET®
Turn-Off Delay Time
7.1ns
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF6668TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6668TR1 to view detailed technical specifications.
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