The IRF6668TR1 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature range of -40°C to 150°C. It has a maximum power dissipation of 2.8W and a maximum drain to source breakdown voltage of 80V. The device features a continuous drain current of 55A and a maximum Rds on resistance of 15mR. It is available in a CHIP CARRIER, R-XBCC-N3 package quantity of 1000 units per reel.
MountingSurface Mount
PolarityN-CHANNEL
Power2.8W
Quick Jump:
Technical Specifications
International Rectifier IRF6668TR1 technical specifications.
General
| Continuous Drain Current (ID) | 55A |
| Drain to Source Breakdown Voltage | 80V |
| Drain to Source Voltage (Vdss) | 80V |
| Fall Time | 23ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.32nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.8W |
| Rds On Max | 15mR |
| RoHS Compliant | No |
| Series | HEXFET® |
| Turn-Off Delay Time | 7.1ns |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF6668TR1 Datasheet
Download the complete datasheet for International Rectifier IRF6668TR1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
