IRF6668TR1PBF

N-Channel MOSFET, 80V, 55A, 15mR, SMD

N-channel power MOSFET featuring 80V drain-source breakdown voltage and a maximum continuous drain current of 55A. This silicon, metal-oxide semiconductor FET offers a low 15mΩ drain-source on-resistance at a nominal 4V gate-source voltage. Designed for surface mounting with a compact 6.35mm x 5.05mm x 0.536mm footprint, it operates within a temperature range of -40°C to 150°C. Key switching characteristics include a 19ns turn-on delay and a 7.1ns turn-off delay, with an input capacitance of 1.32nF. This component is RoHS compliant and packaged on tape and reel.

Current Rating55A

MountingSurface Mount

PolarityN-CHANNEL

Power2.8W

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Technical Specifications

International Rectifier IRF6668TR1PBF technical specifications.

General

Continuous Drain Current (ID)	55A
Current Rating	55A
Drain to Source Breakdown Voltage	80V
Drain to Source Resistance	12mR
Drain to Source Voltage (Vdss)	80V
Drain-source On Resistance-Max	15mR
Dual Supply Voltage	80V
Fall Time	23ns
Gate to Source Voltage (Vgs)	20V
Height	0.536mm
Input Capacitance	1.32nF
Lead Free	Lead Free
Length	6.35mm
Max Operating Temperature	150°C
Min Operating Temperature	-40°C
Max Power Dissipation	2.8W
Mount	Surface Mount
Nominal Vgs	4V
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.8W
Radiation Hardening	No
Rds On Max	15mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	HEXFET®
Termination	SMD/SMT
Turn-Off Delay Time	7.1ns
Turn-On Delay Time	19ns
DC Rated Voltage	80V
Width	5.05mm