N-Channel Power MOSFET, 20V Vdss, 32A Continuous Drain Current. Features low 1.8mΩ Rds(on) at 10V Vgs, 2.5mΩ Drain to Source Resistance, and 6.58nF input capacitance. Operates with a 12V Gate to Source Voltage, exhibiting 23ns turn-on delay and 10ns fall time. Encased in a compact surface mount package with dimensions of 6.35mm L x 5.05mm W x 0.506mm H, this RoHS compliant component supports a maximum power dissipation of 2.8W and operates between -40°C and 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power2W
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Technical Specifications
International Rectifier IRF6691TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 2.5mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 0.506mm |
| Input Capacitance | 6.58nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 1.8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 23ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6691TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6691TRPBF to view detailed technical specifications.
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