Resistance0.0052R
MountingSurface Mount
PolarityN-CHANNEL
Power2.7W
Quick Jump:
Technical Specifications
International Rectifier IRF6702M2DTRPBF technical specifications.
General
| Continuous Drain Current (ID) | 15A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 11.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.38nF |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.7W |
| Rds On Max | 6.6mR |
| Resistance | 0.0052R |
| RoHS Compliant | No |
| Series | HEXFET® |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF6702M2DTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6702M2DTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.