N-Channel Power MOSFET featuring 25V drain-source breakdown voltage and 12A continuous drain current. Offers low on-resistance of 7.8mΩ at 10Vgs, with a maximum of 13.5mΩ at 10Vgs. Designed for surface mounting with a compact 4.85mm x 3.95mm x 0.57mm footprint. Operates across a wide temperature range from -55°C to 175°C, with fast switching speeds including a 9.5ns fall time. This component is RoHS compliant and halogen-free.
MountingSurface Mount
PolarityN-CHANNEL
Power21W
Quick Jump:
Technical Specifications
International Rectifier IRF6709S2TRPBF technical specifications.
General
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
13.5mR
Drain to Source Voltage (Vdss)
25V
Fall Time
9.5ns
Gate to Source Voltage (Vgs)
20V
Height
0.57mm
Input Capacitance
1.81nF
Length
4.85mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
21W
Radiation Hardening
No
Rds On Max
3.8mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
9.1ns
Turn-On Delay Time
8.4ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6709S2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6709S2TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.