N-Channel Power MOSFET, 25V Vds, 17A Continuous Drain Current, and 4.9mΩ Max Drain-Source On-Resistance. Features include 1.9V Threshold Voltage, 12ns Fall Time, 11ns Turn-On Delay, and 14ns Turn-Off Delay. This surface-mount component offers 1.57nF Input Capacitance and 2.2W Max Power Dissipation, operating from -40°C to 150°C. It is RoHS compliant and supplied on tape and reel.
MountingSurface Mount
PolarityN-CHANNEL
Power2.2W
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Technical Specifications
International Rectifier IRF6712STR1PBF technical specifications.
General
Continuous Drain Current (ID)
17A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
8.7mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
4.9MR
Dual Supply Voltage
25V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Height
0.62mm
Input Capacitance
1.57nF
Lead Free
Lead Free
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Nominal Vgs
1.9V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.2W
Radiation Hardening
No
Rds On Max
4.9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.9V
Turn-Off Delay Time
14ns
Turn-On Delay Time
11ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6712STR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6712STR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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