The IRF6713STRPBF is a surface mount N-CHANNEL HEXFET MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -40°C. It has a continuous drain current of 22A and a drain to source breakdown voltage of 25V. The device features a drain to source resistance of 4.6mR and a maximum power dissipation of 2.2W. It is RoHS compliant and packaged in a tape and reel format.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6713STRPBF technical specifications.
General
| Continuous Drain Current (ID) | 22A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4.6mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 2.88nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 9.2ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6713STRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6713STRPBF to view detailed technical specifications.
No datasheet is available for this part.