International Rectifier
IRF6713STRPBF
Power Field-Effect Transistor, 22A I(D), 25V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, ISOMETRIC-2
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6713STRPBF technical specifications.
General
Continuous Drain Current (ID)
22A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
4.6mR
Drain to Source Voltage (Vdss)
25V
Fall Time
6ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.88nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
3mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
9.2ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6713STRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6713STRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.