N-channel MOSFET featuring 25V drain-source breakdown voltage and 39A continuous drain current. Offers low 1.6mΩ maximum drain-source on-resistance at a nominal 1.9V gate-source voltage. Designed for surface mount applications with a compact 5.05mm width, 5.45mm length, and 0.6mm height. Operates across a wide temperature range from -40°C to 150°C with a maximum power dissipation of 3.6W. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRF6716MTR1PBF technical specifications.
General
Continuous Drain Current (ID)
39A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
2.6mR
Drain to Source Voltage (Vdss)
25V
Drain-source On Resistance-Max
1.6MR
Dual Supply Voltage
25V
Fall Time
41ns
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
5.15nF
Lead Free
Lead Free
Length
5.45mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
3.6W
Mount
Surface Mount
Nominal Vgs
1.9V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
3.6W
Radiation Hardening
No
Rds On Max
1.6mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
25ns
Turn-On Delay Time
26ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6716MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6716MTR1PBF to view detailed technical specifications.
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