N-channel MOSFET featuring 25V drain-source breakdown voltage and 39A continuous drain current. Offers low 1.6mΩ maximum drain-source on-resistance at a nominal 1.9V gate-source voltage. Designed for surface mount applications with a compact 5.05mm width, 5.45mm length, and 0.6mm height. Operates across a wide temperature range from -40°C to 150°C with a maximum power dissipation of 3.6W. RoHS compliant and lead-free.
MountingSurface Mount
PolarityN-CHANNEL
Power3.6W
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Technical Specifications
International Rectifier IRF6716MTR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 39A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 2.6mR |
| Drain to Source Voltage (Vdss) | 25V |
| Drain-source On Resistance-Max | 1.6MR |
| Dual Supply Voltage | 25V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 5.15nF |
| Lead Free | Lead Free |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 3.6W |
| Mount | Surface Mount |
| Nominal Vgs | 1.9V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.6W |
| Radiation Hardening | No |
| Rds On Max | 1.6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 26ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6716MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6716MTR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.