N-channel MOSFET with 30V drain-source breakdown voltage and 11A continuous drain current. Features low 8mR Rds(on) and 1.7W power dissipation. Surface mountable with a compact 4.85mm x 3.95mm x 0.57mm footprint. Operates across a wide temperature range from -55°C to 175°C. RoHS compliant and supplied in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
Power17W
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Technical Specifications
International Rectifier IRF6720S2TRPBF technical specifications.
General
Continuous Drain Current (ID)
11A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
12.8mR
Drain to Source Voltage (Vdss)
30V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Height
0.57mm
Input Capacitance
1.14nF
Length
4.85mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.7W
Mount
Surface Mount
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
17W
Radiation Hardening
No
Rds On Max
8mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
11ns
Turn-On Delay Time
13ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6720S2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6720S2TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.