N-channel MOSFET with 30V drain-source breakdown voltage and 11A continuous drain current. Features low 8mR Rds(on) and 1.7W power dissipation. Surface mountable with a compact 4.85mm x 3.95mm x 0.57mm footprint. Operates across a wide temperature range from -55°C to 175°C. RoHS compliant and supplied in tape and reel packaging.
MountingSurface Mount
PolarityN-CHANNEL
Power17W
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Technical Specifications
International Rectifier IRF6720S2TRPBF technical specifications.
General
| Continuous Drain Current (ID) | 11A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 12.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.57mm |
| Input Capacitance | 1.14nF |
| Length | 4.85mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.7W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 17W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 13ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6720S2TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6720S2TRPBF to view detailed technical specifications.
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