N-channel MOSFET transistor featuring 30V drain-source breakdown voltage and 13A continuous drain current. Offers low on-resistance of 4.7mΩ at 10V gate-source voltage, with a threshold voltage of 1.8V. Designed for surface mounting with a compact 6.35mm x 5.05mm x 0.62mm package, it operates across a temperature range of -40°C to 150°C. This RoHS compliant component boasts fast switching speeds with turn-on delay of 11ns and fall time of 6.1ns.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6722MTR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 6.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.62mm |
| Input Capacitance | 1.3nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.3W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 7.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | 1.8V |
| Turn-Off Delay Time | 9.6ns |
| Turn-On Delay Time | 11ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6722MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6722MTR1PBF to view detailed technical specifications.
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