N-channel MOSFET transistor featuring 30V drain-source breakdown voltage and 13A continuous drain current. Offers low on-resistance of 4.7mΩ at 10V gate-source voltage, with a threshold voltage of 1.8V. Designed for surface mounting with a compact 6.35mm x 5.05mm x 0.62mm package, it operates across a temperature range of -40°C to 150°C. This RoHS compliant component boasts fast switching speeds with turn-on delay of 11ns and fall time of 6.1ns.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6722MTR1PBF technical specifications.
General
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.8mR
Drain to Source Voltage (Vdss)
30V
Fall Time
6.1ns
Gate to Source Voltage (Vgs)
20V
Height
0.62mm
Input Capacitance
1.3nF
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.3W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Radiation Hardening
No
Rds On Max
7.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
9.6ns
Turn-On Delay Time
11ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6722MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6722MTR1PBF to view detailed technical specifications.
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