
N-channel MOSFET for surface mount applications, featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 13A. Offers a low drain-source on-resistance of 7.3mR at a nominal gate-source voltage of 1.9V. Designed with a 4.85mm length, 3.95mm width, and 0.62mm height, this component boasts fast switching characteristics with turn-on delay time of 7.7ns and fall time of 5.7ns. Operating within a temperature range of -40°C to 150°C, it supports a maximum power dissipation of 42W and is RoHS compliant.
International Rectifier IRF6722STR1PBF technical specifications.
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