N-channel MOSFET for surface mount applications, featuring a 30V drain-source breakdown voltage and a maximum continuous drain current of 13A. Offers a low drain-source on-resistance of 7.3mR at a nominal gate-source voltage of 1.9V. Designed with a 4.85mm length, 3.95mm width, and 0.62mm height, this component boasts fast switching characteristics with turn-on delay time of 7.7ns and fall time of 5.7ns. Operating within a temperature range of -40°C to 150°C, it supports a maximum power dissipation of 42W and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6722STR1PBF technical specifications.
General
Continuous Drain Current (ID)
13A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
10.3mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
7.3MR
Dual Supply Voltage
30V
Fall Time
5.7ns
Gate to Source Voltage (Vgs)
20V
Height
0.62mm
Input Capacitance
1.32nF
Lead Free
Lead Free
Length
4.85mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.2W
Mount
Surface Mount
Nominal Vgs
1.9V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
42W
Rds On Max
7.3mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
8.5ns
Turn-On Delay Time
7.7ns
Width
3.95mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6722STR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6722STR1PBF to view detailed technical specifications.
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