N-channel MOSFET featuring 30V drain-source breakdown voltage and 13A continuous drain current. Offers low on-resistance with a maximum of 7.3mR at 10Vgs. Designed for surface mount applications with a compact 4.85mm x 3.95mm x 0.506mm footprint. Fast switching characteristics include a 7.7ns turn-on delay and 5.7ns fall time. Operates within a temperature range of -40°C to 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power42W
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Technical Specifications
International Rectifier IRF6722STRPBF technical specifications.
General
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.3mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 5.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 1.32nF |
| Length | 4.85mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.2W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 42W |
| Radiation Hardening | No |
| Rds On Max | 7.3mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 8.5ns |
| Turn-On Delay Time | 7.7ns |
| Width | 3.95mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6722STRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6722STRPBF to view detailed technical specifications.
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