N-channel MOSFET featuring 30V drain-source breakdown voltage and 27A continuous drain current. Offers low on-resistance with a maximum of 2.5mΩ at a nominal Vgs of 1.8V. Designed for surface mounting with a compact 5.45mm x 5.05mm x 0.6mm package. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 16ns. Operates within a temperature range of -40°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6724MTR1PBF technical specifications.
General
Continuous Drain Current (ID)
27A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.5mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
4.404nF
Length
5.45mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
2.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Turn-Off Delay Time
23ns
Turn-On Delay Time
11ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6724MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6724MTR1PBF to view detailed technical specifications.
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