N-channel MOSFET featuring 30V drain-source breakdown voltage and 27A continuous drain current. Offers low on-resistance with a maximum of 2.5mΩ at a nominal Vgs of 1.8V. Designed for surface mounting with a compact 5.45mm x 5.05mm x 0.6mm package. Includes fast switching characteristics with turn-on delay of 11ns and fall time of 16ns. Operates within a temperature range of -40°C to 150°C and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6724MTR1PBF technical specifications.
General
| Continuous Drain Current (ID) | 27A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 3.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Dual Supply Voltage | 30V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.6mm |
| Input Capacitance | 4.404nF |
| Length | 5.45mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Nominal Vgs | 1.8V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 89W |
| Radiation Hardening | No |
| Rds On Max | 2.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Termination | SMD/SMT |
| Turn-Off Delay Time | 23ns |
| Turn-On Delay Time | 11ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6724MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6724MTR1PBF to view detailed technical specifications.
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