N-Channel MOSFET featuring 30V drain-source breakdown voltage and 170A continuous drain current. Offers low 2.2mR Rds On resistance and 100W maximum power dissipation. Surface mount component with fast switching speeds, including 16ns turn-on delay and 13ns fall time. Operates across a -40°C to 150°C temperature range and is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power100W
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Technical Specifications
International Rectifier IRF6725MTRPBF technical specifications.
General
Continuous Drain Current (ID)
170A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
3.2mR
Drain to Source Voltage (Vdss)
30V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
4.7nF
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
100W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
100W
Radiation Hardening
No
Rds On Max
2.2mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Threshold Voltage
1.8V
Turn-Off Delay Time
19ns
Turn-On Delay Time
16ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6725MTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6725MTRPBF to view detailed technical specifications.
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