N-Channel Power MOSFET featuring 30V Drain-Source Breakdown Voltage and 32A Continuous Drain Current. Offers low on-resistance with Rds On Max of 1.7mR at a nominal Vgs of 1.8V. Designed for surface mount applications with a compact 5.45mm x 5.05mm x 0.6mm package. Includes fast switching characteristics with a fall time of 16ns and turn-off delay of 24ns. Maximum power dissipation is rated at 89W, with a maximum operating temperature of 150°C.
MountingSurface Mount
PolarityN-CHANNEL
Power89W
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Technical Specifications
International Rectifier IRF6727MTR1PBF technical specifications.
General
Continuous Drain Current (ID)
32A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
2.4mR
Drain to Source Voltage (Vdss)
30V
Dual Supply Voltage
30V
Fall Time
16ns
Gate to Source Voltage (Vgs)
20V
Height
0.6mm
Input Capacitance
6.19nF
Length
5.45mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Nominal Vgs
1.8V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
89W
Radiation Hardening
No
Rds On Max
1.7mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET®
Termination
SMD/SMT
Threshold Voltage
1.8V
Turn-Off Delay Time
24ns
Turn-On Delay Time
21ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6727MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6727MTR1PBF to view detailed technical specifications.
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