N-Channel HEXFET Power MOSFET featuring 25V drain-source breakdown voltage and 1.7mΩ Rds(on) at 10V gate drive. This surface-mount component offers a continuous drain current of 32A and a maximum power dissipation of 100W. Key switching characteristics include a 15ns turn-on delay and 9.6ns fall time, with input capacitance at 4.42nF. Operating temperature range spans -40°C to 150°C, and the component is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power100W
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Technical Specifications
International Rectifier IRF6794MTRPBF technical specifications.
General
| Continuous Drain Current (ID) | 32A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 3mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 9.6ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 0.506mm |
| Input Capacitance | 4.42nF |
| Length | 6.35mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.8W |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Radiation Hardening | No |
| Rds On Max | 1.7mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 9.7ns |
| Turn-On Delay Time | 15ns |
| Width | 5.05mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6794MTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6794MTRPBF to view detailed technical specifications.
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