N-Channel HEXFET Power MOSFET featuring 25V drain-source breakdown voltage and 1.7mΩ Rds(on) at 10V gate drive. This surface-mount component offers a continuous drain current of 32A and a maximum power dissipation of 100W. Key switching characteristics include a 15ns turn-on delay and 9.6ns fall time, with input capacitance at 4.42nF. Operating temperature range spans -40°C to 150°C, and the component is RoHS compliant.
MountingSurface Mount
PolarityN-CHANNEL
Power100W
Quick Jump:
Technical Specifications
International Rectifier IRF6794MTRPBF technical specifications.
General
Continuous Drain Current (ID)
32A
Drain to Source Breakdown Voltage
25V
Drain to Source Resistance
3mR
Drain to Source Voltage (Vdss)
25V
Fall Time
9.6ns
Gate to Source Voltage (Vgs)
20V
Height
0.506mm
Input Capacitance
4.42nF
Length
6.35mm
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
2.8W
Mount
Surface Mount
Package Quantity
4800
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
100W
Radiation Hardening
No
Rds On Max
1.7mR
RoHS Compliant
Yes
Series
HEXFET®
Turn-Off Delay Time
9.7ns
Turn-On Delay Time
15ns
Width
5.05mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF6794MTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6794MTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.