International Rectifier
IRF6810STRPBF
Power Field-Effect Transistor, 16A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, ISOMETRIC-3
MountingSurface Mount
Power2.1W
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Technical Specifications
International Rectifier IRF6810STRPBF technical specifications.
General
| Continuous Drain Current (ID) | 16A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 4mR |
| Fall Time | 4.8ns |
| Gate to Source Voltage (Vgs) | 16V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Mount | Surface Mount |
| Package Quantity | 4800 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 8.2ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6810STRPBF Datasheet
Download the complete datasheet for International Rectifier IRF6810STRPBF to view detailed technical specifications.
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