IRF6892STRPBF

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

Resistance0.0013R

MountingSurface Mount

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International Rectifier IRF6892STRPBF technical specifications.

Continuous Drain Current (ID)

125A

Drain to Source Voltage (Vdss)

25V

Input Capacitance

2.51nF

Lead Free

Max Power Dissipation

2.1W

Mount

Surface Mount

Package Quantity

4800

Packaging

Tape and Reel

Rds On Max

1.7mR

Resistance

0.0013R

RoHS Compliant

Yes

Series

HEXFET®

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.