PackageSOIC
MountingSurface Mount
Power2.1W
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Technical Specifications
International Rectifier IRF6893MTR1PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 29A |
| Drain to Source Breakdown Voltage | 25V |
| Drain to Source Resistance | 1.2mR |
| Drain to Source Voltage (Vdss) | 25V |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 3.48nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 2.1W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 2.1W |
| Radiation Hardening | No |
| Rds On Max | 1.6mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 19ns |
| Turn-On Delay Time | 18ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF6893MTR1PBF Datasheet
Download the complete datasheet for International Rectifier IRF6893MTR1PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.