International Rectifier
IRF7103IPBF
Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8, 8 PIN
PackageSOIC
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7103IPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Fall Time
25ns
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
2
Packaging
Rail/Tube
Power Dissipation
2W
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
45ns
Turn-On Delay Time
9ns
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7103IPBF Datasheet
Download the complete datasheet for International Rectifier IRF7103IPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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