International Rectifier
IRF7103QPBF
Small Signal Field-Effect Transistor, 3A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7103QPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
50V
Fall Time
2.3ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
255pF
Length
5mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.4W
Mount
Surface Mount
Packaging
Rail/Tube
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
15ns
Turn-On Delay Time
5.1ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7103QPBF Datasheet
Download the complete datasheet for International Rectifier IRF7103QPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.