International Rectifier
IRF7105
Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7105 technical specifications.
General
Package/Case
SOIC
Gate to Source Voltage (Vgs)
20V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
2
Power Dissipation
2W
RoHS Compliant
No
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF7105 Datasheet
Download the complete datasheet for International Rectifier IRF7105 to view detailed technical specifications.
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