International Rectifier
IRF7105QTRPBF
Power Field-Effect Transistor, N-Channel and P-Channel, Metal-oxide Semiconductor FET,
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7105QTRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 2.3A |
| Drain to Source Voltage (Vdss) | 25V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 330pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 45ns |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7105QTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7105QTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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