International Rectifier
IRF7105TR
Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
Quick Jump:
Technical Specifications
International Rectifier IRF7105TR technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.5A |
| Drain to Source Voltage (Vdss) | 25V |
| Max Operating Temperature | 150°C |
| Max Power Dissipation | 2W |
| Nominal Vgs | 3V |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | No |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7105TR Datasheet
Download the complete datasheet for International Rectifier IRF7105TR to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
