IRF7201PBF

N-Channel MOSFET, 30V, 7.3A, 50mR, SOIC, Surface Mount

N-Channel Power MOSFET, 30V Vds, 7.3A Continuous Drain Current (ID), and 0.03 Ohm (30mR) Drain-Source On-Resistance. This single-element silicon Metal-Oxide-Semiconductor Field-Effect Transistor features a fast 7ns turn-on delay and 19ns fall time, with a maximum power dissipation of 2.5W. Packaged in a lead-free SOIC (MS-012AA) surface-mount case, it operates from -55°C to 150°C and is RoHS compliant.

PackageSOIC

Current Rating7.3A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

International Rectifier IRF7201PBF technical specifications.

General

Package/Case	SOIC
Continuous Drain Current (ID)	7.3A
Current Rating	7.3A
Drain to Source Breakdown Voltage	30V
Drain to Source Resistance	50mR
Drain to Source Voltage (Vdss)	30V
Dual Supply Voltage	30V
Fall Time	19ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	550pF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Nominal Vgs	1V
Number of Elements	1
Package Quantity	95
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS Compliant	Yes
Turn-Off Delay Time	21ns
Turn-On Delay Time	7ns
DC Rated Voltage	30V
Width	4mm