P-channel MOSFET with 5.4A continuous drain current and 20V drain-source breakdown voltage. Features 60mΩ drain-source resistance (Rds On Max) and 780pF input capacitance. Operates within a -55°C to 150°C temperature range, with a maximum power dissipation of 2.5W. This surface-mount device is supplied in an SOIC package and is RoHS compliant.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2.5W
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Technical Specifications
International Rectifier IRF7207PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.4A |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 780pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Threshold Voltage | -700mV |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7207PBF Datasheet
Download the complete datasheet for International Rectifier IRF7207PBF to view detailed technical specifications.
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