P-channel MOSFET, surface mount, featuring 9.5A continuous drain current and a 12V drain-source breakdown voltage. Offers a low 20mΩ drain-source on-resistance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2.5W. Includes a 6nF input capacitance and fast switching times with a 370ns fall time and 77ns turn-off delay.
PackageSOIC
Current Rating-9.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF7233PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9.5A |
| Current Rating | -9.5A |
| Drain to Source Breakdown Voltage | -12V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 12V |
| Drain-source On Resistance-Max | 20MR |
| Fall Time | 370ns |
| Gate to Source Voltage (Vgs) | 12V |
| Input Capacitance | 6nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
| Turn-Off Delay Time | 77ns |
| DC Rated Voltage | -12V |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7233PBF Datasheet
Download the complete datasheet for International Rectifier IRF7233PBF to view detailed technical specifications.
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