N-Channel MOSFET, 2-element silicon power field-effect transistor featuring 20V drain-source voltage and 5.2A continuous drain current. Offers a low 0.05 ohm drain-source on-resistance and 660pF input capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Packaged in a lead-free, RoHS-compliant SOIC (SO-8) surface-mount package.
PackageSOIC
Current Rating5.2A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7301PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 5.2A |
| Current Rating | 5.2A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 50mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 660pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Nominal Vgs | 700mV |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Row Spacing | 6.3mm |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 9ns |
| DC Rated Voltage | 20V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7301PBF Datasheet
Download the complete datasheet for International Rectifier IRF7301PBF to view detailed technical specifications.
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