
N-Channel MOSFET, 2-element silicon power field-effect transistor featuring 20V drain-source voltage and 5.2A continuous drain current. Offers a low 0.05 ohm drain-source on-resistance and 660pF input capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Packaged in a lead-free, RoHS-compliant SOIC (SO-8) surface-mount package.
International Rectifier IRF7301PBF technical specifications.
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