N-Channel MOSFET, 2-element silicon power field-effect transistor featuring 20V drain-source voltage and 5.2A continuous drain current. Offers a low 0.05 ohm drain-source on-resistance and 660pF input capacitance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W. Packaged in a lead-free, RoHS-compliant SOIC (SO-8) surface-mount package.
PackageSOIC
Current Rating5.2A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7301PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5.2A
Current Rating
5.2A
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
50mR
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
660pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
700mV
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
2W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Turn-Off Delay Time
32ns
Turn-On Delay Time
9ns
DC Rated Voltage
20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7301PBF Datasheet
Download the complete datasheet for International Rectifier IRF7301PBF to view detailed technical specifications.
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