Dual N-Channel MOSFET featuring 30V drain-source voltage and 4.9A continuous drain current. Offers a low 50mΩ maximum drain-source on-resistance. Designed for surface mounting in an SOIC package, this silicon Metal-oxide Semiconductor FET operates from -55°C to 150°C with a 2W power dissipation. Includes 520pF input capacitance and 6.8ns turn-on delay.
PackageSOIC
Current Rating4.9A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7303PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.9A |
| Current Rating | 4.9A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 50mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 520pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 6.8ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7303PBF Datasheet
Download the complete datasheet for International Rectifier IRF7303PBF to view detailed technical specifications.
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