
Dual-channel MOSFET featuring N-channel and P-channel configurations. Offers a 20V drain-to-source breakdown voltage and a 5.2A current rating. Achieves a low 50mΩ drain-source on-resistance at a 5mm length, 4mm width, and 1.5mm height. Surface-mount SOIC package with 610pF input capacitance and 33ns fall time. Operates within a -55°C to 150°C temperature range.
International Rectifier IRF7307PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4.3A |
| Current Rating | 5.2A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 50mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 90mR |
| Fall Time | 33ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 1.4W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 700mV |
| Turn-Off Delay Time | 51ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7307PBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
