Dual-channel MOSFET featuring N-channel and P-channel configurations. Offers a 20V drain-to-source breakdown voltage and a 5.2A current rating. Achieves a low 50mΩ drain-source on-resistance at a 5mm length, 4mm width, and 1.5mm height. Surface-mount SOIC package with 610pF input capacitance and 33ns fall time. Operates within a -55°C to 150°C temperature range.
PackageSOIC
Current Rating5.2A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
International Rectifier IRF7307PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.3A
Current Rating
5.2A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
50mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
90mR
Fall Time
33ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
610pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
95
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
1.4W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
700mV
Turn-Off Delay Time
51ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7307PBF Datasheet
Download the complete datasheet for International Rectifier IRF7307PBF to view detailed technical specifications.
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