International Rectifier
IRF7307QPBF
Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, LEAD FREE, SOP-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7307QPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.3A
Drain to Source Voltage (Vdss)
20V
Dual Supply Voltage
20V
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
610pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
700mV
Packaging
Rail/Tube
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Termination
SMD/SMT
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7307QPBF Datasheet
Download the complete datasheet for International Rectifier IRF7307QPBF to view detailed technical specifications.
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