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Technical Specifications
International Rectifier IRF7309QTRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Drain to Source Voltage (Vdss)
30V
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
520pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Radiation Hardening
No
Rds On Max
50mR
RoHS Compliant
Yes
Series
HEXFET®
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7309QTRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7309QTRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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