Dual N-Channel and P-Channel MOSFET, 30V drain-source voltage, 4A continuous drain current, and 160mΩ maximum drain-source on-resistance. Features a 1V threshold voltage, 440pF input capacitance, and 25ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 1.4W. Packaged in a RoHS compliant, lead-free SOIC package for surface mounting.
PackageSOIC
Current Rating4A
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7309TRPBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
160mR
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
440pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.4W
Mount
Surface Mount
Packaging
Cut Tape
Radiation Hardening
No
RoHS Compliant
Yes
Threshold Voltage
1V
Turn-Off Delay Time
25ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7309TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7309TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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