
Dual N-Channel and P-Channel MOSFET, 30V drain-source voltage, 4A continuous drain current, and 160mΩ maximum drain-source on-resistance. Features a 1V threshold voltage, 440pF input capacitance, and 25ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 1.4W. Packaged in a RoHS compliant, lead-free SOIC package for surface mounting.
International Rectifier IRF7309TRPBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 160mR |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.5mm |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.4W |
| Mount | Surface Mount |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 25ns |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7309TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
