International Rectifier
IRF7311
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7311 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 6.6A |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 900pF |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| RoHS Compliant | No |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 8.1ns |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
International Rectifier IRF7311 Datasheet
Download the complete datasheet for International Rectifier IRF7311 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.