International Rectifier
IRF7313
Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
MountingSurface Mount
Quick Jump:
Technical Specifications
International Rectifier IRF7313 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
6.5A
Drain to Source Voltage (Vdss)
30V
FET Type
2 N-Channel
Input Capacitance
650pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Nominal Vgs
1V
Package Quantity
95
Packaging
Rail/Tube
Rds On Max
29mR
Reach SVHC Compliant
No
RoHS Compliant
No
Series
HEXFET®
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF7313 Datasheet
Download the complete datasheet for International Rectifier IRF7313 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.