International Rectifier
IRF7317
Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SO-8
PackageSOIC
MountingSurface Mount
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Technical Specifications
International Rectifier IRF7317 technical specifications.
General
Package/Case
SOIC
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
780pF
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
RoHS Compliant
No
Width
4mm
Compliance
RoHS
Not Compliant
Datasheet
International Rectifier IRF7317 Datasheet
Download the complete datasheet for International Rectifier IRF7317 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.