P-Channel MOSFET, 20V Vds, 9A Continuous Drain Current, 18mΩ Max On-Resistance. This dual-element silicon Metal-Oxide Semiconductor FET features a surface-mount SOIC package with a 2W power dissipation. Operating temperature range is -55°C to 150°C, with a gate-source voltage of 12V and a threshold voltage of -1V. Includes 2.94nF input capacitance and is RoHS compliant.
PackageSOIC
Current Rating-9A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7324PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
9A
Current Rating
-9A
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
18mR
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
2.94nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
2
Packaging
Tape and Reel
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
HEXFET® Series
Threshold Voltage
-1V
Turn-Off Delay Time
170ns
Turn-On Delay Time
17ns
DC Rated Voltage
-20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7324PBF Datasheet
Download the complete datasheet for International Rectifier IRF7324PBF to view detailed technical specifications.
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