P-Channel MOSFET, 20V Vds, 9A Continuous Drain Current, 18mΩ Max On-Resistance. This dual-element silicon Metal-Oxide Semiconductor FET features a surface-mount SOIC package with a 2W power dissipation. Operating temperature range is -55°C to 150°C, with a gate-source voltage of 12V and a threshold voltage of -1V. Includes 2.94nF input capacitance and is RoHS compliant.
PackageSOIC
Current Rating-9A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7324PBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 9A |
| Current Rating | -9A |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 18mR |
| Gate to Source Voltage (Vgs) | 12V |
| Height | 1.5mm |
| Input Capacitance | 2.94nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Packaging | Tape and Reel |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | HEXFET® Series |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 170ns |
| Turn-On Delay Time | 17ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7324PBF Datasheet
Download the complete datasheet for International Rectifier IRF7324PBF to view detailed technical specifications.
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