P-channel MOSFET, surface mount, SOIC package. Features 30V drain-source breakdown voltage, 3.6A continuous drain current, and 100mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 20V, offering a threshold voltage of -1V. Includes 18ns fall time and 25ns turn-off delay time, with 440pF input capacitance. Rated for 2W maximum power dissipation and lead-free construction.
International Rectifier IRF7326D2PBF technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3.6A |
| Current Rating | -3.6A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 95 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 100mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | FETKY™ |
| Threshold Voltage | -1V |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | -30V |
| RoHS | Compliant |
Download the complete datasheet for International Rectifier IRF7326D2PBF to view detailed technical specifications.
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