IRF7331PBF

N-channel, 2-element silicon Metal-oxide Semiconductor FET for surface mounting in an SOIC package. Features a continuous drain current of 7A, drain-to-source breakdown voltage of 20V, and a low drain-to-source resistance of 30mΩ. Offers fast switching with a turn-on delay of 7.6ns and fall time of 50ns. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W.