N-channel, 2-element silicon Metal-oxide Semiconductor FET for surface mounting in an SOIC package. Features a continuous drain current of 7A, drain-to-source breakdown voltage of 20V, and a low drain-to-source resistance of 30mΩ. Offers fast switching with a turn-on delay of 7.6ns and fall time of 50ns. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2W.
PackageSOIC
Current Rating7A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
International Rectifier IRF7331PBF technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
20V
Fall Time
50ns
Gate to Source Voltage (Vgs)
12V
Height
1.5mm
Input Capacitance
1.34nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
2
Package Quantity
95
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
1.2V
Turn-Off Delay Time
110ns
Turn-On Delay Time
7.6ns
DC Rated Voltage
20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
International Rectifier IRF7331PBF Datasheet
Download the complete datasheet for International Rectifier IRF7331PBF to view detailed technical specifications.
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