The IRF7338TRPBF is a dual-channel FET from International Rectifier. It features a maximum drain current of 3A and a maximum drain to source breakdown voltage of 12V. The device is packaged in a SOIC package and is designed for surface mount applications. The IRF7338TRPBF is RoHS compliant and has a maximum power dissipation of 2W. It is suitable for use in a variety of applications, including power management and switching circuits.
PackageSOIC
MountingSurface Mount
PolarityP-CHANNEL
Power2W
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Technical Specifications
International Rectifier IRF7338TRPBF technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Drain to Source Breakdown Voltage | 12V |
| Drain to Source Resistance | 34mR |
| Drain to Source Voltage (Vdss) | 12V |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 8V |
| Input Capacitance | 640pF |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 34mR |
| RoHS Compliant | Yes |
| Series | HEXFET® |
Compliance
| RoHS | Compliant |
Datasheet
International Rectifier IRF7338TRPBF Datasheet
Download the complete datasheet for International Rectifier IRF7338TRPBF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.