International Rectifier
IRF7341
Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8
PackageSOIC
Current Rating4.7A
MountingSurface Mount
Power2W
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Technical Specifications
International Rectifier IRF7341 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
4.7A
Current Rating
4.7A
Gate to Source Voltage (Vgs)
20V
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
2
Power Dissipation
2W
Radiation Hardening
No
RoHS Compliant
No
DC Rated Voltage
55V
Compliance
RoHS
Not CompliantNo
Datasheet
International Rectifier IRF7341 Datasheet
Download the complete datasheet for International Rectifier IRF7341 to view detailed technical specifications.
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